CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si / Baldassarre, L.; Sakat, E.; Bollani, M.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Pellegrini, G.; Giliberti, V.; Ballabio, A.; Fischer, M. P.; Brida, D.; Isella, G.; Paul, D. J.; Ortolani, M.; Biagioni, P.. - ELETTRONICO. - 2016-:(2016), pp. 1-2. (Intervento presentato al convegno 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 tenutosi a Bella Center, dnk nel 2016) [10.1109/IRMMW-THz.2016.7758725].
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si
Baldassarre, L.;Bollani, M.;Giliberti, V.;Ortolani, M.;
2016
Abstract
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
