CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si / Baldassarre, L., Sakat, E., Bollani, M., Samarelli, A., Gallacher, K., Frigerio, J., Pellegrini, G., Giliberti, V., Ballabio, A., Fischer, M.P., Brida, D., Isella, G., Paul, D.J., Ortolani, M., Biagioni, P.. - ELETTRONICO. - 2016-:(2016), pp. 1-2. (41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 Bella Center, dnk 2016) [10.1109/IRMMW-THz.2016.7758725].
Mid-infrared plasmonic platform based on n-doped Ge-on-Si: Molecular sensing with germanium nano-antennas on Si
Baldassarre, L.;Bollani, M.;Giliberti, V.;Ortolani, M.;
2016
Abstract
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
