High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8 × 1019 cm−3 has been achieved starting from an incorporated phosphorous concentration of 1.1 × 1020 cm−3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing / Frigerio, J.; Ballabio, A.; Gallacher, K.; Gilberti, V.; Baldassarre, Leonetta; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, Douglas J.; Ortolani, Michele; Pecora, A.; Napolitani, E.; Isella, G.. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - ELETTRONICO. - 50:465103(2017). [10.1088/1361-6463/aa8eca]
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing
Baldassarre, Leonetta;Ortolani, Michele
;
2017
Abstract
High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8 × 1019 cm−3 has been achieved starting from an incorporated phosphorous concentration of 1.1 × 1020 cm−3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.File | Dimensione | Formato | |
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