A systematic study of the optical and microscopic properties of self-assembled quantum dots in InxGa1-xAs/GaAs heterostructures has been carried out by varying the In concentration and the (InGa)As layer thickness on both(1 0 0) and (3 1 1)B orientations. Photoluminescence spectroscopy indicates that the dot formation on high-index substrates is delayed at larger amount of (InGa)As with respect to (1 0 0) substrates for both moderate (x = 0.5) and high (x = 1.0) lattice mismatch. Atomic force microscopy shows that consistently smaller and flatter dots are obtained on high-index planes, highlighting the important role played by substrate morphology on the dot self-aggregation process. (C) 1999 Elsevier Science B.V. All rights reserved.
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures / Polimeni, Antonio; A., Patane; M., Henini; L., Eaves; P. C., Main; S., Sanguinetti; M., Guzzi. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - STAMPA. - 201:(1999), pp. 276-279. (Intervento presentato al convegno 10th International Conference on Molecular Beam Epitaxy (MBE-X) tenutosi a CANNES, FRANCE nel AUG 31-SEP 04, 1998) [10.1016/s0022-0248(98)01339-6].
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures
POLIMENI, Antonio;
1999
Abstract
A systematic study of the optical and microscopic properties of self-assembled quantum dots in InxGa1-xAs/GaAs heterostructures has been carried out by varying the In concentration and the (InGa)As layer thickness on both(1 0 0) and (3 1 1)B orientations. Photoluminescence spectroscopy indicates that the dot formation on high-index substrates is delayed at larger amount of (InGa)As with respect to (1 0 0) substrates for both moderate (x = 0.5) and high (x = 1.0) lattice mismatch. Atomic force microscopy shows that consistently smaller and flatter dots are obtained on high-index planes, highlighting the important role played by substrate morphology on the dot self-aggregation process. (C) 1999 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
