The thermal behavior of lasers based on In 0.5Ga 0.5/As/GaAs self-aggregated quantum dots is investigated. Increasing temperature from 10 to 290 K produces a narrowing of the dot laser mode distribution. This effect is explained in terms of carrier relaxation between dots and carrier thermal escape from dots to nonradiative recombination centers. The thermal dependence of the threshold current and the differential quantum efficiency is also discussed. © 1999 American Institute of Physics.
Thermal effects in quantum dot lasers / A., Patane; Polimeni, Antonio; M., Henini; L., Eaves; P. C., Main; G., Hill. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 85:1(1999), pp. 625-627. [10.1063/1.369417]
Thermal effects in quantum dot lasers
POLIMENI, Antonio;
1999
Abstract
The thermal behavior of lasers based on In 0.5Ga 0.5/As/GaAs self-aggregated quantum dots is investigated. Increasing temperature from 10 to 290 K produces a narrowing of the dot laser mode distribution. This effect is explained in terms of carrier relaxation between dots and carrier thermal escape from dots to nonradiative recombination centers. The thermal dependence of the threshold current and the differential quantum efficiency is also discussed. © 1999 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
