In this work we report the effects of the growth interruption on the optical and microscopic propel-ties of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy on (100) and (311)B oriented GaAs substrates. The growth interruption applied after the deposition of the InAs layer strongly affects the optical and microscopic properties of the dots, thus providing evidence of strong nonequilibrium effects on dot self-assembly. These effects are enhanced for dots grown on high-index planes and can be used to tune the emission energy and to improve the luminescence intensity of the dots. (C) 1999 Academic Press.
Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes / A., Patane; M., Henini; Polimeni, Antonio; L., Eaves; P. C., Main; M., Al Khafaji; A. G., Cullis. - In: SUPERLATTICES AND MICROSTRUCTURES. - ISSN 0749-6036. - STAMPA. - 25:1-2(1999), pp. 113-117. (Intervento presentato al convegno 11th International Conference on Superlattices, Microstructures and Microdevices (ICSMM-11) tenutosi a HURGADA, EGYPT nel JUL 27-31, 1998) [10.1006/spmi.1998.0622].
Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes
POLIMENI, Antonio;
1999
Abstract
In this work we report the effects of the growth interruption on the optical and microscopic propel-ties of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy on (100) and (311)B oriented GaAs substrates. The growth interruption applied after the deposition of the InAs layer strongly affects the optical and microscopic properties of the dots, thus providing evidence of strong nonequilibrium effects on dot self-assembly. These effects are enhanced for dots grown on high-index planes and can be used to tune the emission energy and to improve the luminescence intensity of the dots. (C) 1999 Academic Press.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
