Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 degrees C. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the capacitance-voltage technique. From analysis of photoluminescence and capacitance-voltage measurements it follows that the quantum dots have electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 meV and 170 meV above the top of the GaAs valence band. (C) 1999 Academic Press.
Electron and hole levels of InAs quantum dots in a GaAs matrix / M., Henini; P. N., Brounkov; Polimeni, Antonio; S. T., Stoddart; P. C., Main; L., Eaves; A. R., Kovsh; Yu G., Musikhin; S. G., Konnikov. - In: SUPERLATTICES AND MICROSTRUCTURES. - ISSN 0749-6036. - STAMPA. - 25:1-2(1999), pp. 105-111. (Intervento presentato al convegno 11th International Conference on Superlattices, Microstructures and Microdevices (ICSMM-11) tenutosi a HURGADA, EGYPT nel JUL 27-31, 1998) [10.1006/spmi.1998.0621].
Electron and hole levels of InAs quantum dots in a GaAs matrix
POLIMENI, Antonio;
1999
Abstract
Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 degrees C. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the capacitance-voltage technique. From analysis of photoluminescence and capacitance-voltage measurements it follows that the quantum dots have electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 meV and 170 meV above the top of the GaAs valence band. (C) 1999 Academic Press.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
