The optical and microscopic properties of highly strained In0.5Ga0.5As/GaAs heterostructures grown on (100), (311)A and (311)B-oriented substrates have been investigated by means of photoluminescence and atomic force microscopy, respectively. Samples grown on (100) show a clear transition in their photoluminescence spectra at a critical value of L due to the self-assembling of quantum dots. On the other hand, the same structures grown on (311) show a quite smooth evolution of the luminescence properties with L. The microscopic measurements indicate that these differences are associated with the morphology of dots formed on (311) substrates. Finally, in order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge-emitting lasers by extending the well-known technology for (100) to the (311)B devices. (C) 1999 Elsevier Science Ltd. All rights reserved.
Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots / M., Henini; Polimeni, Antonio; A., Patane; L., Eaves; P. C., Main; G., Hill. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 30:4-5(1999), pp. 319-322. [10.1016/s0026-2692(98)00129-3]
Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots
POLIMENI, Antonio;
1999
Abstract
The optical and microscopic properties of highly strained In0.5Ga0.5As/GaAs heterostructures grown on (100), (311)A and (311)B-oriented substrates have been investigated by means of photoluminescence and atomic force microscopy, respectively. Samples grown on (100) show a clear transition in their photoluminescence spectra at a critical value of L due to the self-assembling of quantum dots. On the other hand, the same structures grown on (311) show a quite smooth evolution of the luminescence properties with L. The microscopic measurements indicate that these differences are associated with the morphology of dots formed on (311) substrates. Finally, in order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge-emitting lasers by extending the well-known technology for (100) to the (311)B devices. (C) 1999 Elsevier Science Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
