We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and InGaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands, Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed. (C) 2000 Elsevier Science Ltd. All rights reserved.
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case / S., Sanguinetti; G., Chiantoni; A., Miotto; E., Grilli; M., Guzzi; M., Henini; Polimeni, Antonio; A., Patane; L., Eaves; P. C., Main. - In: MICRON. - ISSN 0968-4328. - 31:3(2000), pp. 309-313. (Intervento presentato al convegno Workshop on Microstructural and Microanalytical Characterisation of Semiconducting Materials and Devices tenutosi a LECCE, ITALY nel NOV 04-11, 1998) [10.1016/s0968-4328(99)00098-0].
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
POLIMENI, Antonio;
2000
Abstract
We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and InGaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands, Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed. (C) 2000 Elsevier Science Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
