Capacitance-voltage characteristics have been measured at various frequencies and temperatures for structures containing a sheet of self-assembled InAs quantum dots in both n-GaAs and p-GaAs matrices. Analysis of the capacitance-voltage characteristics shows that the deposition of 1.7 ML of InAs forms quantum dots with electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 and 170 meV above the top of the GaAs valence band. The carrier energy levels agree very well with the recombination energies obtained from photoluminescence spectra. (C) 1998 American Institute of Physics. [S0003-6951(98)01034-1]
Electronic structure of self-assembled InAs quantum dots in GaAs matrix / P. N., Brounkov; Polimeni, Antonio; S. T., Stoddart; M., Henini; L., Eaves; P. C., Main; A. R., Kovsh; Yu G., Musikhin; S. G., Konnikov. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 73:8(1998), pp. 1092-1094. [10.1063/1.122094]
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
POLIMENI, Antonio;
1998
Abstract
Capacitance-voltage characteristics have been measured at various frequencies and temperatures for structures containing a sheet of self-assembled InAs quantum dots in both n-GaAs and p-GaAs matrices. Analysis of the capacitance-voltage characteristics shows that the deposition of 1.7 ML of InAs forms quantum dots with electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 and 170 meV above the top of the GaAs valence band. The carrier energy levels agree very well with the recombination energies obtained from photoluminescence spectra. (C) 1998 American Institute of Physics. [S0003-6951(98)01034-1]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
