Intrinsic di-interstitial are stable against the isolated self-interstitial point defects in GaAs making such complexes important in, for instance, irradiated GaAs. We illustrate and discuss diffusion of such complexes in comparison with isolated self-interstitials studied by first priciples tota energy calculations. It is shown that di-interstitials can diffuse rapidly through the lattice, similarly to isolated self-interstitials.
Calculation of di-interstitial diffusion barriers in GaAs by density functional theory / Zollo, Giuseppe; Gala, Fabrizio. - STAMPA. - (2012), pp. 67-76.
Calculation of di-interstitial diffusion barriers in GaAs by density functional theory
ZOLLO, Giuseppe;GALA, FABRIZIO
2012
Abstract
Intrinsic di-interstitial are stable against the isolated self-interstitial point defects in GaAs making such complexes important in, for instance, irradiated GaAs. We illustrate and discuss diffusion of such complexes in comparison with isolated self-interstitials studied by first priciples tota energy calculations. It is shown that di-interstitials can diffuse rapidly through the lattice, similarly to isolated self-interstitials.File allegati a questo prodotto
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.