3rd place in the False Color Image Category at the 49th International Symposium for Testing and Failure Analysis held November 12-16, 2023 in Phoenix, AZ

Power MOSFETs are electronic devices that are commonly used as switches or amplifiers in power electronics applications such as motor control, audio amplifiers, power supplies and illumination systems. During the fabrication process, impurities such as copper can become incorporated into the device structure, giving rise to defects in crystal lattice and creating localized areas of high resistance or conductivity. In this work we present a multiscale and multimodal correlative microscopy workflow for the characterization of copper inclusions found in the epitaxial layer in power MOSFETs combining Light Microscopy (LM), non-destructive 3D X-ray Microscopy (XRM), Focused-Ion Beam Scanning Electron Microscopy (FIB-SEM) tomography coupled with Energy Dispersive Xray Spectroscopy (EDX), and Transmission Electron Microscopy (TEM) coupled with Electron Energy Loss Spectroscopy (EELS). Thanks to this approach of correlating 2D and 3D morphological insights with chemical information, a comprehensive and multiscale understanding of copper segregations distribution and effects at the structural level of the power MOSFETs can be achieved.