Wafers of (100) GaAs have been implanted with 140 keV Zn+ ions at off-channeling direction up to a fluence of 1 x 10(14) cm-2. The target temperature was kept at 110 +/- 10-degrees-C. The defect clusters and the damage depth distributions were investigated by planar and cross-sectional high-resolution transmission electron microscopy (HRTEM and XHRTEM) and were modelled by a MAR-LOWE-based computer code. The experimental mean depth of the damage profile located at about 85 nm exceeds the calculated deposited energy and vacancy distributions by more than 50%. The correlation between the deposited energy density within the cascade and the inner structure of the observed defect clusters is discussed.
Damage distribution in GaAs implanted at elevated temperature / M., Kalitzova; D., Karpuzov; N., Pashov; G., Vitali; Rossi, Marco. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 80/81:(1993), pp. 647-650. [10.1016/0168-583X(93)96201-M]
Damage distribution in GaAs implanted at elevated temperature
ROSSI, Marco
1993
Abstract
Wafers of (100) GaAs have been implanted with 140 keV Zn+ ions at off-channeling direction up to a fluence of 1 x 10(14) cm-2. The target temperature was kept at 110 +/- 10-degrees-C. The defect clusters and the damage depth distributions were investigated by planar and cross-sectional high-resolution transmission electron microscopy (HRTEM and XHRTEM) and were modelled by a MAR-LOWE-based computer code. The experimental mean depth of the damage profile located at about 85 nm exceeds the calculated deposited energy and vacancy distributions by more than 50%. The correlation between the deposited energy density within the cascade and the inner structure of the observed defect clusters is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
