By means of high resolution x-ray diffraction and photoluminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAs1-xNx/GaAs, the original tensile strain of the as-grown material is reversed into a compressive one and that, at the same time, N atoms are electronically passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N-H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully-hydrogenated GaAs 1-xNx/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs 1-xNx/GaAs. © 2007 American Institute of Physics.
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys / G., Bisognin; D., DE SALVADOR; E., Napolitani; M., Berti; Polimeni, Antonio; Felici, Marco; Capizzi, Mario; M., Gngerich; P. J., Klar; G., Bais; F., Jabeen; M., Piccin; S., Rubini; F., Martelli; A., Franciosi. - 893:(2007), pp. 155-156. (Intervento presentato al convegno 28th International Conference on the Physics of Semiconductors - ICPS 2006 tenutosi a Vienna; Austria nel 2006) [10.1063/1.2729816].
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys
POLIMENI, Antonio;FELICI, Marco;CAPIZZI, Mario;
2007
Abstract
By means of high resolution x-ray diffraction and photoluminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAs1-xNx/GaAs, the original tensile strain of the as-grown material is reversed into a compressive one and that, at the same time, N atoms are electronically passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N-H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully-hydrogenated GaAs 1-xNx/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs 1-xNx/GaAs. © 2007 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
