The yield of low voltage digital circuits based on standard cell design is found to be sensitive to local gate delay and power variations due to uncorrelated intra-die parameter fluctuations. Caused by random nature of doping positions they lead to more pronounced deviations for minimum transistor sizes. The basic idea of this work is to optimize the transistor level single standard cells by making the cells more resistant for process variations. © 2013 IEEE.

Sizing and optimization of low power process variation aware standard cells / ABBAS, ZIA; KHALID, USMAN; OLIVIERI, Mauro. - (2013), pp. 181-184. (Intervento presentato al convegno 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 tenutosi a South Lake Tahoe; United States nel 13 October 2013 through 17 October 2013) [10.1109/iirw.2013.6804189].

Sizing and optimization of low power process variation aware standard cells

ABBAS, ZIA;KHALID, USMAN;OLIVIERI, Mauro
2013

Abstract

The yield of low voltage digital circuits based on standard cell design is found to be sensitive to local gate delay and power variations due to uncorrelated intra-die parameter fluctuations. Caused by random nature of doping positions they lead to more pronounced deviations for minimum transistor sizes. The basic idea of this work is to optimize the transistor level single standard cells by making the cells more resistant for process variations. © 2013 IEEE.
2013
2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
process variations; yield; optimization; monte carlo; standard cells; worst case distance
Pubblicazione in atti di convegno::04b Atto di convegno in volume
Sizing and optimization of low power process variation aware standard cells / ABBAS, ZIA; KHALID, USMAN; OLIVIERI, Mauro. - (2013), pp. 181-184. (Intervento presentato al convegno 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 tenutosi a South Lake Tahoe; United States nel 13 October 2013 through 17 October 2013) [10.1109/iirw.2013.6804189].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/541323
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