The effects of hydrogen incorporation on the electronic properties of Ga(AsBi) alloys are investigated in a wide range of Bi-concentration (0.6% <= x <= 10.6%) by Hall effect measurements in magnetic fields up to 14 T and by photoluminescence spectroscopy. For all the investigated Bi-concentrations, we report the passivation of Bi-induced shallow acceptor levels-responsible for the native p-type conductivity in Ga(AsBi)-and a tenfold increase of the hole mobility upon hydrogen incorporation in the host lattice. The emission energy is, instead, negligibly affected by hydrogenation, indicating that the narrowing of the band-gap energy with Bi and the native p-type conductivity are two uncorrelated effects arising from different Bi-induced electronic levels. Passivation by hydrogen of the shallow Bi-acceptor levels makes also possible to identify deep Bi-acceptor states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768237]

Effects of hydrogen on the electronic properties of Ga(AsBi) alloys / Pettinari, Giorgio; A., Patane; Polimeni, Antonio; Capizzi, Mario; Xianfeng, Lu; T., Tiedje. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 101:22(2012), pp. 222103-222103-5. [10.1063/1.4768237]

Effects of hydrogen on the electronic properties of Ga(AsBi) alloys

PETTINARI, GIORGIO;POLIMENI, Antonio;CAPIZZI, Mario;
2012

Abstract

The effects of hydrogen incorporation on the electronic properties of Ga(AsBi) alloys are investigated in a wide range of Bi-concentration (0.6% <= x <= 10.6%) by Hall effect measurements in magnetic fields up to 14 T and by photoluminescence spectroscopy. For all the investigated Bi-concentrations, we report the passivation of Bi-induced shallow acceptor levels-responsible for the native p-type conductivity in Ga(AsBi)-and a tenfold increase of the hole mobility upon hydrogen incorporation in the host lattice. The emission energy is, instead, negligibly affected by hydrogenation, indicating that the narrowing of the band-gap energy with Bi and the native p-type conductivity are two uncorrelated effects arising from different Bi-induced electronic levels. Passivation by hydrogen of the shallow Bi-acceptor levels makes also possible to identify deep Bi-acceptor states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768237]
2012
01 Pubblicazione su rivista::01a Articolo in rivista
Effects of hydrogen on the electronic properties of Ga(AsBi) alloys / Pettinari, Giorgio; A., Patane; Polimeni, Antonio; Capizzi, Mario; Xianfeng, Lu; T., Tiedje. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 101:22(2012), pp. 222103-222103-5. [10.1063/1.4768237]
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/505926
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 9
social impact