Amorphous and hydrogenated (a-SiC:H) as well as crystalline silicon carbide are widespread materials for optoelectronic applications. In this paper, we studied the effect of laser/RF plasma jet treatment of a-SiC:H thin films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), on Si wafers. A Nd:YAG laser (λ = 1.06 μ, tFWHM = 14 ns, E0 equals 0.015 J/pulse) was used with a fluence of 4 mJ/cm2 incident on the sample, the number of pulses being varied. Plasma treatments were performed in a plasma jet generated by a capacity coupled RF discharge in N2. Different analysis techniques were used to investigate the films, before and after the irradiation: X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy (ThM). We followed the modification of their structure and composition as an effect of the laser/plasma treatment. A comparison with the excimer and also with the RF treatments was performed. ©2003 Copyright SPIE - The International Society for Optical Engineering.
Laser treatment of a-SiC:H thin films for optoelectronic applications / I., Vlad Valentin; D., Ghica; Niculae E., Mincu; Catrinel A., Stanciu; H., Dinescu Gheorghe; E., Aldea; Viorel, Sandu; A., Andrei; Maria, Dinescu; Ferrari, Aldo; Balucani, Marco; G., Lamedica; C., Dumitras Dan. - 3405:(1998), pp. 831-836. (Intervento presentato al convegno ROMOPTO '97: 5th Conference on Optics tenutosi a Bucharest nel 9 September 1997 through 9 September 1997) [10.1117/12.312672].
Laser treatment of a-SiC:H thin films for optoelectronic applications
FERRARI, Aldo;BALUCANI, Marco;
1998
Abstract
Amorphous and hydrogenated (a-SiC:H) as well as crystalline silicon carbide are widespread materials for optoelectronic applications. In this paper, we studied the effect of laser/RF plasma jet treatment of a-SiC:H thin films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), on Si wafers. A Nd:YAG laser (λ = 1.06 μ, tFWHM = 14 ns, E0 equals 0.015 J/pulse) was used with a fluence of 4 mJ/cm2 incident on the sample, the number of pulses being varied. Plasma treatments were performed in a plasma jet generated by a capacity coupled RF discharge in N2. Different analysis techniques were used to investigate the films, before and after the irradiation: X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy (ThM). We followed the modification of their structure and composition as an effect of the laser/plasma treatment. A comparison with the excimer and also with the RF treatments was performed. ©2003 Copyright SPIE - The International Society for Optical Engineering.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
