GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications. © 2011 IOP Publishing Ltd.
Local modification of GaAs nanowires induced by laser heating / S., Yazji; I., Zardo; M., Soini; Postorino, Paolo; A. Fontcuberta I., Morral; G., Abstreiter. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - STAMPA. - 22:32(2011), p. 325701. [10.1088/0957-4484/22/32/325701]
Local modification of GaAs nanowires induced by laser heating
POSTORINO, Paolo;
2011
Abstract
GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications. © 2011 IOP Publishing Ltd.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
