In this paper, we use a two-pulse C-V technique to study detrapping in Al2O3 metal-oxide-semiconductor at extremely short (and long) times. The investigated timescale spanned from hundreds of microseconds to ten minutes. The flat band voltage instability was studied systematically and a phenomenological model was written which accounts for logarithmic dependence on time, and linear dependence on the film thickness and the accelerating voltage. A main goal of the work is to demonstrate that this technique is a tool for the investigation of fast electrical transients in high-k films on timescale which are not accessible with conventional steady-state techniques. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3369335]
Detrapping dynamics in Al2O3 metal-oxide-semiconductor / Rao, Rosario; Irrera, Fernanda. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 107:10(2010), pp. 103708-1-103708-6. [10.1063/1.3369335]
Detrapping dynamics in Al2O3 metal-oxide-semiconductor
RAO, ROSARIO;IRRERA, Fernanda
2010
Abstract
In this paper, we use a two-pulse C-V technique to study detrapping in Al2O3 metal-oxide-semiconductor at extremely short (and long) times. The investigated timescale spanned from hundreds of microseconds to ten minutes. The flat band voltage instability was studied systematically and a phenomenological model was written which accounts for logarithmic dependence on time, and linear dependence on the film thickness and the accelerating voltage. A main goal of the work is to demonstrate that this technique is a tool for the investigation of fast electrical transients in high-k films on timescale which are not accessible with conventional steady-state techniques. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3369335]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
