A systematic study of laser treatment of the channel of an amorphous silicon junction field effect transistor (JFET) is presented, using a Nd:YLF laser at 523 rim. and power ranging from 20 to 635 mJ/cm(2). A threshold energy equal to 150 mJ/cm2 is observed, Above this value higher power gives higher channel conductivity and reverse current of the gate-drain and gate-source junctions. Furthermore, the increase of conductivity corresponds to a lack of channel modulability due to an increase of defects and/or active dopant, which hampers the depletion of the channel. (C) 2002 Elsevier Science B.V. All rights reserved.
Laser treatment of amorphous silicon junction field effect transistor channel / Caputo, Domenico; DE CESARE, Giampiero; P., Delli Veneri; M., Tucci. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - 299:PART 2(2002), pp. 1326-1329. (Intervento presentato al convegno 19th International Conference on Amorphis and Microcrystalline Semiconductors (ICAMS 19) tenutosi a OLD NICE, FRANCE nel AUG 27-31, 2001) [10.1016/s0022-3093(01)01096-1].
Laser treatment of amorphous silicon junction field effect transistor channel
CAPUTO, Domenico;DE CESARE, Giampiero;
2002
Abstract
A systematic study of laser treatment of the channel of an amorphous silicon junction field effect transistor (JFET) is presented, using a Nd:YLF laser at 523 rim. and power ranging from 20 to 635 mJ/cm(2). A threshold energy equal to 150 mJ/cm2 is observed, Above this value higher power gives higher channel conductivity and reverse current of the gate-drain and gate-source junctions. Furthermore, the increase of conductivity corresponds to a lack of channel modulability due to an increase of defects and/or active dopant, which hampers the depletion of the channel. (C) 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
