The chemical dissolution of anodically grown Si oxides in acidic fluoride medium has been studied in-situ with the Bending Beam Method (BBM). Current and deflection transients were recorded after switching the electrode from the given polarisation conditions to zero applied field and monitoring the etchback process. Oxide stress values estimated with this approach are free from contributions due to film electrostriction and to changes in surface tension. Transients recorded after polarisation in the regime of current or potential oscillations show dissolution patterns which contain information on the properties of oxide film along its depth profile. (C) 2000 Elsevier Science Ltd. All rights reserved.
Use of the bending-beam-method for the study of the anodic oxidation of Si in dilute fluoride media / Decker, Franco; E., Pantano; Dini, Danilo; S., Cattarin; S., Maffi; G., Razzini. - In: ELECTROCHIMICA ACTA. - ISSN 0013-4686. - 45:28(2000), pp. 4607-4613. (Intervento presentato al convegno 1st Gerischer Symposium on Semiconductor Electrochemistry tenutosi a BERLIN, GERMANY nel JUN 23-25, 1999) [10.1016/s0013-4686(00)00612-5].
Use of the bending-beam-method for the study of the anodic oxidation of Si in dilute fluoride media
DECKER, Franco;DINI, DANILO;
2000
Abstract
The chemical dissolution of anodically grown Si oxides in acidic fluoride medium has been studied in-situ with the Bending Beam Method (BBM). Current and deflection transients were recorded after switching the electrode from the given polarisation conditions to zero applied field and monitoring the etchback process. Oxide stress values estimated with this approach are free from contributions due to film electrostriction and to changes in surface tension. Transients recorded after polarisation in the regime of current or potential oscillations show dissolution patterns which contain information on the properties of oxide film along its depth profile. (C) 2000 Elsevier Science Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
