InP crystals-ion implantation and laser annealing: RHEED, XPS and computer simulation studies

Reflection high-energy electron diffraction RHEED and X-ray photoelectron spectroscopy XPS were used to q . demonstrate the effects of Zn -ion implantation and subsequent low-power pulsed laser annealing LPPLA on the crystallinity and the PrIn ratio near the surface of InP. The influence of ion-beam effects during depth profiling by a 1 to 5 keV Ar beam on the composition of surface layers is discussed in terms of XPS data compared to computer simulation results using a dynamic model based on TRIM. Relative enrichment in P of the topmost surface layer of virgin samples along with the P deficiency below the surface is confirmed by both XPS and computer simulation data, the effect being more pronounced for higher energies of the depth-profiling Arq beam. Severe C and O contamination is found on the . ion-implanted InP surface exposed to air. The PrIn ratios at and below the surface to about 10 nm depth differ from that for the virgin sample. Both RHEED and XPS demonstrate the efficiency of laser pulses at a power density of 6 MWrcm2 in recovering the structure and stoichiometry of ion-implanted crystals of InP.