It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon-aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction.
A model of radiative recombination in n-type porous silicon-aluminium Schottky junction / Balucani, Marco; V., Bondarenko; L., Franchina; G., Lamedica; V. A., Yakovtseva; Ferrari, Aldo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 74 issue 14:(1999), pp. 1960-1962. [10.1063/1.123741]
A model of radiative recombination in n-type porous silicon-aluminium Schottky junction
BALUCANI, Marco;FERRARI, Aldo
1999
Abstract
It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon-aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
