A complete extraction procedure able to determine MESFET and HEMT nonlinear model parameters starting from standard dc and S-parameter measured data is presented. The procedure has been checked on different P-HEMTs, and a¨erage errors lower than 10% has been found for the static output characteristics and for S-parameters up to 50 GHz

A New Algorithm to Extract the Non-Linear Model of MESFET's and HEMT's / A., DI MARTINO; Pisa, Stefano; Tommasino, Pasquale; Trifiletti, Alessandro. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - 20:5:(1999), pp. 297-302.

A New Algorithm to Extract the Non-Linear Model of MESFET's and HEMT's

PISA, Stefano;TOMMASINO, PASQUALE;TRIFILETTI, Alessandro
1999

Abstract

A complete extraction procedure able to determine MESFET and HEMT nonlinear model parameters starting from standard dc and S-parameter measured data is presented. The procedure has been checked on different P-HEMTs, and a¨erage errors lower than 10% has been found for the static output characteristics and for S-parameters up to 50 GHz
1999
01 Pubblicazione su rivista::01a Articolo in rivista
A New Algorithm to Extract the Non-Linear Model of MESFET's and HEMT's / A., DI MARTINO; Pisa, Stefano; Tommasino, Pasquale; Trifiletti, Alessandro. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - 20:5:(1999), pp. 297-302.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/244053
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