Morphology and electronic structure of the (1x2)- and (1x3)-Bi/InSb(110) interfaces have been studied by electron-energy-loss and ultraviolet photoemission spectroscopies. The relative intensity of the Bi-0(4,5), In- and Sb-N-4,N-5 loss structures indicate a Bi coverage of 3/4 and 1/4 monolayer for the (1x2)- and (1x3)-reconstructed phases, respectively. Main Bi-induced filled electronic valence band states, and absorption between bonding and antibonding Bi-derived levels (at 0.5 eV) have been measured, which are peculiar of the reconstructed Bi structures.
Electronic properties of (1xn)-reconstructed Bi/InSb(110) interfaces / Betti, Maria Grazia; D., Berselli; Mariani, Carlo. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - 76:(1995), pp. 465-469. (Intervento presentato al convegno 6th International Conference on Electron Spectroscopy (ICES 6) tenutosi a ROME, ITALY nel JUN 19-23, 1995) [10.1016/0368-2048(95)02489-1].
Electronic properties of (1xn)-reconstructed Bi/InSb(110) interfaces
BETTI, Maria Grazia;MARIANI, CARLO
1995
Abstract
Morphology and electronic structure of the (1x2)- and (1x3)-Bi/InSb(110) interfaces have been studied by electron-energy-loss and ultraviolet photoemission spectroscopies. The relative intensity of the Bi-0(4,5), In- and Sb-N-4,N-5 loss structures indicate a Bi coverage of 3/4 and 1/4 monolayer for the (1x2)- and (1x3)-reconstructed phases, respectively. Main Bi-induced filled electronic valence band states, and absorption between bonding and antibonding Bi-derived levels (at 0.5 eV) have been measured, which are peculiar of the reconstructed Bi structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
