High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed LPPLA GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLAtechnique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer © 1996 American Institute of Physics.
Cross-sectional high resolution electron microscopy of Zn+ implanted and low-power pulsed-laser annealed GaAs / Vitali, Gianfranco; Zollo, Giuseppe; C., Pizzuto; D., Manno; M., Kalitzova; Rossi, Marco. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 69:(1996), pp. 4072-4074. [10.1063/1.117822]
Cross-sectional high resolution electron microscopy of Zn+ implanted and low-power pulsed-laser annealed GaAs
VITALI, Gianfranco;ZOLLO, Giuseppe;ROSSI, Marco
1996
Abstract
High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed LPPLA GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLAtechnique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer © 1996 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.