A model of the drain current in the long-gate JFET and MESFET is proposed in which the electron velocity saturation is not mandatory-requirement for the drain current saturation. According to it the drain current saturation is result of the screening of the field, which the drain voltage creates, by the gates, and the appearing of the diffusion component of drain current. Silvaco simulation confirms the proposed model. Approximate analytical expressions for the drain current before the channel pinch-off and saturation of current after it was obtained. (c) 2005 Elsevier Ltd. All rights reserved.
Model of the drain current saturation in long-gate JFETs and MESFETs / Balucani, Marco; V. N., Dobrovolsky; A. V., Osipov; Ferrari, Aldo. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 49:8(2005), pp. 1251-1254. [10.1016/j.sse.2005.04.024]
Model of the drain current saturation in long-gate JFETs and MESFETs
BALUCANI, Marco;FERRARI, Aldo
2005
Abstract
A model of the drain current in the long-gate JFET and MESFET is proposed in which the electron velocity saturation is not mandatory-requirement for the drain current saturation. According to it the drain current saturation is result of the screening of the field, which the drain voltage creates, by the gates, and the appearing of the diffusion component of drain current. Silvaco simulation confirms the proposed model. Approximate analytical expressions for the drain current before the channel pinch-off and saturation of current after it was obtained. (c) 2005 Elsevier Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
