Flash memory programming by means of Fowler-Nordheim tunnelling has been studied with the aim of minimising oxide degradation and, at the same time, limiting the program voltage and reducing the program time. The target has been obtained using a waveform composed of a few number of pulses. The program accuracy has been validated by means of measurements on a set of flash cells. In particular, using 7 nm-thick tunnel oxide, program time and voltage of, respectively, 21 mus and 18 V, have been demonstrated for a target shift voltage of 1.5 V. Using the optimised waveform, cycling has negligible effects on the program window, (C) 2004 Elsevier B.V. All rights reserved.
Optimising flash memory tunnel programming / Irrera, Fernanda; Teodoro, Fristachi; Caputo, Domenico; Bruno, Ricco. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 72:1-4(2004), pp. 405-410. (Intervento presentato al convegno 13th Biennial Conference on Insulating Films on Semiconductors tenutosi a Barcelona, SPAIN nel JUN 18-20, 2003) [10.1016/j.mee.2004.01.022].
Optimising flash memory tunnel programming
IRRERA, Fernanda;CAPUTO, Domenico;
2004
Abstract
Flash memory programming by means of Fowler-Nordheim tunnelling has been studied with the aim of minimising oxide degradation and, at the same time, limiting the program voltage and reducing the program time. The target has been obtained using a waveform composed of a few number of pulses. The program accuracy has been validated by means of measurements on a set of flash cells. In particular, using 7 nm-thick tunnel oxide, program time and voltage of, respectively, 21 mus and 18 V, have been demonstrated for a target shift voltage of 1.5 V. Using the optimised waveform, cycling has negligible effects on the program window, (C) 2004 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
