This paper is a review of application of porous silicon to Sol technology. Three main approaches for fabricating the Sol structures based on PS are critically reviewed. We show that there exists renewed interest in all these approaches although Sol technology based on layer transfer with PS as the splitting layer is the dominated method. Patent analysis is presented to reveal new potentialities of porous silicon-based Sol technologies.

Porous Silicon Based SOI: History and Prospects / Balucani, Marco; Bondarenko, V; Troyanova, G; Ferrari, A.. - STAMPA. - 185(2005), pp. 53-64.

Porous Silicon Based SOI: History and Prospects

BALUCANI, Marco;
2005

Abstract

This paper is a review of application of porous silicon to Sol technology. Three main approaches for fabricating the Sol structures based on PS are critically reviewed. We show that there exists renewed interest in all these approaches although Sol technology based on layer transfer with PS as the splitting layer is the dominated method. Patent analysis is presented to reveal new potentialities of porous silicon-based Sol technologies.
2005
SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES OPERATING IN A HARSH ENVIRONMENT
1402030118
9781402030116
02 Pubblicazione su volume::02a Capitolo o Articolo
Porous Silicon Based SOI: History and Prospects / Balucani, Marco; Bondarenko, V; Troyanova, G; Ferrari, A.. - STAMPA. - 185(2005), pp. 53-64.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/179719
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