We have observed an increase of overall luminescence intensity and carrier lifetimes of GaAs/AlAs short-period superlattices after exposure of the samples to low-energy hydrogen ion-gun irradiation. We conclude from our data that interface defects which may become important as nonradiative recombination centers in short-period superlattices with only a few monolayers period can be passivated by hydrogen.
HYDROGEN PASSIVATION OF INTERFACE DEFECTS IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES / R., Fischer; G., Peter; E. O., Goebel; Capizzi, Mario; Frova, Andrea; A., Fischer; K., Ploog. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 60:22(1992), pp. 2788-2790. [10.1063/1.106851]
HYDROGEN PASSIVATION OF INTERFACE DEFECTS IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES
CAPIZZI, Mario;FROVA, Andrea;
1992
Abstract
We have observed an increase of overall luminescence intensity and carrier lifetimes of GaAs/AlAs short-period superlattices after exposure of the samples to low-energy hydrogen ion-gun irradiation. We conclude from our data that interface defects which may become important as nonradiative recombination centers in short-period superlattices with only a few monolayers period can be passivated by hydrogen.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
