Picosecond-resolved and steady-state photoluminescence at LHe temperature in low-energy ion-gun hydrogenated GaAs/GaAlAs heterostructures are reported. The exciton in the GaAs layer shows an increase in lifetime - up to a factor of 3 - for moderate hydrogenation, followed by a sharp decrease below the value for the untreated sample, for higher H doses. Luminescence efficiency shows a consistent behavior. Incorporation of H generates a strong D-A band falling approximately 64 meV below the gap energy. The behavior for heavy hydrogenation indicates the formation of a new type of deep defect, not ascribed to surface damage, because of the protective GaAlAs layer, plus the fact that the excitonic emission of the latter shows no variation.
PICOSECOND SPECTROSCOPY OF HYDROGENATED MBE-GAAS / Capizzi, Mario; Coluzza, Carlo; P., Frankl; Frova, Andrea; M., Colocci; M., Gurioli; A., Vinattieri; R. N., Sacks. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - STAMPA. - 170:1-4(1991), pp. 561-565. (Intervento presentato al convegno 6TH TRIESTE SYMP ON SEMICONDUCTORS tenutosi a TRIESTE, ITALY nel AUG 27-31, 1990) [10.1016/0921-4526(91)90178-h].
PICOSECOND SPECTROSCOPY OF HYDROGENATED MBE-GAAS
CAPIZZI, Mario;COLUZZA, Carlo;FROVA, Andrea;
1991
Abstract
Picosecond-resolved and steady-state photoluminescence at LHe temperature in low-energy ion-gun hydrogenated GaAs/GaAlAs heterostructures are reported. The exciton in the GaAs layer shows an increase in lifetime - up to a factor of 3 - for moderate hydrogenation, followed by a sharp decrease below the value for the untreated sample, for higher H doses. Luminescence efficiency shows a consistent behavior. Incorporation of H generates a strong D-A band falling approximately 64 meV below the gap energy. The behavior for heavy hydrogenation indicates the formation of a new type of deep defect, not ascribed to surface damage, because of the protective GaAlAs layer, plus the fact that the excitonic emission of the latter shows no variation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
