Plasmonic materials have the free electron oscillations in a metal coupled to photons and allow near field amplification of radiation below the plasmon edge. Metals such as Au and Ag can be used for visible wavelengths but these materials are incompatible with silicon foundries due to fast diffusion and the deep level trap states formed. Heavily doped semiconductors well above the Mott metal-insulator transition criteria can be used as plasmonic materials for the mid-infrared wavelengths where many molecules have strong molecular absorption lines related to the bonds which allow identification. Here n-Ge epitaxially grown on Si substrates is used as a mid-infrared plasmonic material and plasmonic antennas are demonstrated to provide amplification of specific molecular absorption lines of chemical weapon simulants. Examples of mid-infrared plasmonic sensors will be presented with potential applications for healthcare, environmental and chemical, biological, radiological, nuclear and explosives (CBRNE) security sensing.

N-Ge on Si for mid-infrared plasmonic sensors / Paul, Douglas J.; Gallacher, Kevin; Millar, Ross W.; Giliberti, Valeria; Calandrini, Eugenio; Baldassarre, Leonetta; Fischer, Marco P.; Frigerio, Jacopo; Ballabio, Andrea; Sakat, Emilie; Pellegrini, Giovanni; Brida, Daniele; Isella, Giovanni; Ortolani, Michele; Biagioni, Paolo. - ELETTRONICO. - (2017), pp. 125-126. (Intervento presentato al convegno 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017 tenutosi a San Juan Marriott Resort, pri nel 2017) [10.1109/PHOSST.2017.8012682].

N-Ge on Si for mid-infrared plasmonic sensors

Giliberti, Valeria;Calandrini, Eugenio;Baldassarre, Leonetta;Ortolani, Michele;
2017

Abstract

Plasmonic materials have the free electron oscillations in a metal coupled to photons and allow near field amplification of radiation below the plasmon edge. Metals such as Au and Ag can be used for visible wavelengths but these materials are incompatible with silicon foundries due to fast diffusion and the deep level trap states formed. Heavily doped semiconductors well above the Mott metal-insulator transition criteria can be used as plasmonic materials for the mid-infrared wavelengths where many molecules have strong molecular absorption lines related to the bonds which allow identification. Here n-Ge epitaxially grown on Si substrates is used as a mid-infrared plasmonic material and plasmonic antennas are demonstrated to provide amplification of specific molecular absorption lines of chemical weapon simulants. Examples of mid-infrared plasmonic sensors will be presented with potential applications for healthcare, environmental and chemical, biological, radiological, nuclear and explosives (CBRNE) security sensing.
2017
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017
Electrical and Electronic Engineering; Computer Networks and Communications; Hardware and Architecture; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics
04 Pubblicazione in atti di convegno::04c Atto di convegno in rivista
N-Ge on Si for mid-infrared plasmonic sensors / Paul, Douglas J.; Gallacher, Kevin; Millar, Ross W.; Giliberti, Valeria; Calandrini, Eugenio; Baldassarre, Leonetta; Fischer, Marco P.; Frigerio, Jacopo; Ballabio, Andrea; Sakat, Emilie; Pellegrini, Giovanni; Brida, Daniele; Isella, Giovanni; Ortolani, Michele; Biagioni, Paolo. - ELETTRONICO. - (2017), pp. 125-126. (Intervento presentato al convegno 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017 tenutosi a San Juan Marriott Resort, pri nel 2017) [10.1109/PHOSST.2017.8012682].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1027819
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