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Titolo Data di pubblicazione Autore(i) File
Fast Detrapping Transients in High-k Films 2009 Rao, Rosario; Irrera, Fernanda
Fast detrapping transients in high-k dielectric films 2009 Rao, Rosario; Irrera, Fernanda
Charge Trapping Nanoelectronic Memories 2009 Lorenzi, Paolo; Rao, Rosario; Palma, Fabrizio; G., Ghidini; Irrera, Fernanda
Charge trapping NonVolatile Memory 2009 Lorenzi, Paolo; Rao, Rosario; Palma, Fabrizio; G., Ghidini; Irrera, Fernanda
threshold voltage instability in high-k based flash memory 2010 Rao, Rosario; Irrera, Fernanda
Trapping in high-k dielectrics 2010 Rao, Rosario; Riccardo, Simoncini; Irrera, Fernanda
Detrapping dynamics in Al2O3 metal-oxide-semiconductor 2010 Rao, Rosario; Irrera, Fernanda
Threshold voltage instability in high-k based flash memories 2010 Rao, Rosario; Irrera, Fernanda
Electron-Related Phenomena at the TaN/Al2O3 Interface 2010 Rao, Rosario; Lorenzi, Paolo; G., Ghidini; Palma, Fabrizio; Irrera, Fernanda
Advanced Characterization of Metal/High-k Interface 2010 Irrera, Fernanda; Lorenzi, Paolo; Rao, Rosario; R., Simoncini; G., Ghidini; H. D. B., Gottlob; M., Schmidt
Trapping in GdSiO high-k films 2011 Rao, Rosario; R., Simoncini; H. D. B., Gottlob; M., Schmidt; Irrera, Fernanda
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 2011 C., Cagli; J., Buckley; V., Jousseaume; T., Cabout; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; Lorenzi, Paolo; L., Massari; Rao, Rosario; Irrera, Fernanda; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; A., Padovani; O., Pirrotta; L., Vandelli; L., Larcher; G., Reimbold; B., De Salvo
Nanometric Resistive Memories for the next technology node 2011 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda; J., Buckley; C., Cagli; B., De Salvo
Structural and electrical properties of atomic layer deposited Al-doped ZrO 2 films and of the interface with TaN electrode 2012 S., Spiga; Rao, Rosario; L., Lamagna; C., Wiemer; G., Congedo; A., Lamperti; A., Molle; M., Fanciulli; Palma, Fabrizio; Irrera, Fernanda
Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells 2012 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Electrical instability in LaLuO3 based metal-oxide-semiconductor capacitors and role of the metal electrodes 2013 Rao, Rosario; Irrera, Fernanda
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM 2013 Lorenzi, Paolo; Rao, Rosario; T., Prifti; Irrera, Fernanda
Forming kinetics in HfO2-Based RRAM cells 2013 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Advanced methodology for electrical characterization of metal/high-k interfaces 2014 Rao, Rosario; Lorenzi, Paolo; Irrera, Fernanda
A thorough investigation of the progressive reset dynamics in HfO<inf>2</inf>-based resistive switching structures 2015 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda; Suñé, J.; Miranda, E.
Mostrati risultati da 1 a 20 di 41
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